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Synchronous dynamic random-access memory ( SDRAM) is any (DRAM) where the operation of its external pin interface is coordinated by an externally supplied. DRAM (ICs) produced from the early 1970s to mid-1990s used an asynchronous interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a synchronous interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by, the clock signal controls the stepping of an internal that responds to incoming commands.
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These commands can be pipelined to improve performance, with previously started operations completing while new commands are received. The memory is divided into several equally sized but independent sections called, allowing the device to operate on a memory access command in each bank simultaneously and speed up access in an fashion.
This allows SDRAMs to achieve greater concurrency and higher data transfer rates than asynchronous DRAMs could. Means that the chip can accept a new command before it has finished processing the previous one. For a pipelined write, the write command can be immediately followed by another command without waiting for the data to be written into the memory array. For a pipelined read, the requested data appears a fixed number of clock cycles (latency) after the read command, during which additional commands can be sent.
SDRAM is widely used in. Beyond the original SDRAM, further generations of RAM have entered the – (also known as DDR1), DDR2, DDR3 and DDR4, with the latest generation (DDR4) released in the second half of 2014. Eight SDRAM ICs on a package. Although the concept of synchronous was well understood by the 1970s and was used with early Intel processors, it was only in 1993 that SDRAM began its path to universal acceptance in the electronics industry.
In 1993, Samsung introduced its KM48SL2000 synchronous DRAM, and by 2000, SDRAM had replaced virtually all other types of in modern computers, because of its greater performance. SDRAM latency is not inherently lower (faster) than asynchronous DRAM. Indeed, early SDRAM was somewhat slower than contemporaneous due to the additional logic. The benefits of SDRAM's internal buffering come from its ability to interleave operations to multiple banks of memory, thereby increasing effective. Today, virtually all SDRAM is manufactured in compliance with standards established by, an electronics industry association that adopts to facilitate interoperability of electronic components.
JEDEC formally adopted its first SDRAM standard in 1993 and subsequently adopted other SDRAM standards, including those for,. Streaming captain tsubasa sub indo. SDRAM is also available in varieties, for systems that require greater scalability such as. Today, the world's largest manufacturers of SDRAM include:,,,. SDRAM timing [ ] There are several limits on DRAM performance. Most noted is the read cycle time, the time between successive read operations to an open row.
This time decreased from 10 ns for 100 MHz SDRAM to 5 ns for DDR-400, but has remained relatively unchanged through DDR2-800 and DDR3-1600 generations. However, by operating the interface circuitry at increasingly higher multiples of the fundamental read rate, the achievable bandwidth has increased rapidly. Another limit is the, the time between supplying a column address and receiving the corresponding data. Again, this has remained relatively constant at 10–15 ns through the last few generations of DDR SDRAM. In operation, CAS latency is a specific number of clock cycles programmed into the SDRAM's mode register and expected by the DRAM controller. Any value may be programmed, but the SDRAM will not operate correctly if it is too low.
At higher clock rates, the useful CAS latency in clock cycles naturally increases. 10–15 ns is 2–3 cycles (CL2–3) of the 200 MHz clock of DDR-400 SDRAM, CL4-6 for DDR2-800, and CL8-12 for DDR3-1600.
Slower clock cycles will naturally allow lower numbers of CAS latency cycles. SDRAM modules have their own timing specifications, which may be slower than those of the chips on the module. When 100 MHz SDRAM chips first appeared, some manufacturers sold '100 MHz' modules that could not reliably operate at that clock rate. In response, Intel published the standard, which outlines requirements and guidelines for producing a memory module that can operate reliably at 100 MHz. This standard was widely influential, and the term 'PC100' quickly became a common identifier for 100 MHz SDRAM modules, and modules are now commonly designated with 'PC'-prefixed numbers (, or - although the actual meaning of the numbers has changed).